UMF22NTR

Manufacturer: ROHM Semiconductor

Description

TRANS DIGITAL BJT NPN 12V 500MA/

Technical Parameters

Parameter Value
Product Status Active
Transistor Type 1 NPN Pre-Biased, 1 NPN
Current - Collector (Ic) (Max) 500mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 12V, 50V
Resistor - Base (R1) 10kOhms
Resistor - Emitter Base (R2) 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 10mA, 2V / 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 200mA / 300mV @ 500μA, 10mA
Current - Collector Cutoff (Max) 100nA (ICBO), 500nA
Frequency - Transition 250MHz, 320MHz
Power - Max 150mW
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package UMT6

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