EMF5XV6T1G
Manufacturer:
onsemi
Category:
Bipolar Transistor Arrays, Pre-Biased
Description
TRANS PREBIAS 1NPN 1PNP SOT563
$0.00
Technical Parameters
| Parameter | Value |
|---|---|
| Product Status | Active |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max) | 100mA, 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V, 12V |
| Resistor - Base (R1) | 47kOhms |
| Resistor - Emitter Base (R2) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V / 270 @ 10mA, 2V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300μA, 10mA / 250mV @ 10mA, 200mA |
| Current - Collector Cutoff (Max) | 500nA, 100nA (ICBO) |
| Frequency - Transition | - |
| Power - Max | 357mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | SOT-563 |