EMH1FHAT2R
Manufacturer:
ROHM Semiconductor
Category:
Bipolar Transistor Arrays, Pre-Biased
Description
NPN+NPN DIGITAL TRANSISTOR (CORR
$0.00
Technical Parameters
| Parameter | Value |
|---|---|
| Product Status | Not For New Designs |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | - |
| Resistor - Base (R1) | 22kOhms |
| Resistor - Emitter Base (R2) | 22kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 5mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500μA, 10mA |
| Current - Collector Cutoff (Max) | - |
| Frequency - Transition | 250MHz |
| Power - Max | 150mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | EMT6 |