DTB113ESTP

Manufacturer: ROHM Semiconductor

Description

TRANS PREBIAS PNP 300MW SPT

Technical Parameters

Parameter Value
Product Status Obsolete
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 1 kOhms
Resistor - Emitter Base (R2) 1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 33 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 200 MHz
Power - Max 300 mW
Mounting Type Through Hole
Package / Case SC-72 Formed Leads
Supplier Device Package SPT

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