DTC123JETL

Manufacturer: ROHM Semiconductor

Description

TRANS PREBIAS NPN 150MW EMT3

Technical Parameters

Parameter Value
Product Status Active
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 2.2 kOhms
Resistor - Emitter Base (R2) 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 250 MHz
Power - Max 150 mW
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Supplier Device Package EMT3

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