DTC143ZMT2L

Manufacturer: ROHM Semiconductor

Description

TRANS PREBIAS NPN 150MW VMT3

Technical Parameters

Parameter Value
Product Status Active
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 4.7 kOhms
Resistor - Emitter Base (R2) 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 250 MHz
Power - Max 150 mW
Mounting Type Surface Mount
Package / Case SOT-723
Supplier Device Package VMT3

Industry News