NXH50M65L4Q1SG

Manufacturer: onsemi
Category: IGBT Modules

Description

Q1PACK 50A 650V

Technical Parameters

Parameter Value
Product Status Active
IGBT Type Trench Field Stop
Configuration Full Bridge
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 48 A
Power - Max 86 W
Vce(on) (Max) @ Vge, Ic 2.22V @ 15V, 50A
Current - Collector Cutoff (Max) 300 μA
Input Capacitance (Cies) @ Vce 3.137 nF @ 20 V
Input Standard
NTC Thermistor Yes
Operating Temperature 175°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package 56-PIM (93x47)

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